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InSb Hall Element
HW-302B
*High-sensitivity InSb Hall element. *Thin SIP package. *Shipped in bulk (500pcs per pack).
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems.
*Absolute Maximum Ratings
Item Symbol Limit Unit
Max. Input Current
Ic
Const. Current Drive
20
mA
Operating Temp. Range
Topr.
-40 to +110
C
Storage Temp. Range
Tstg.
-40 to +125
C
*Classification of Output Hall Voltage (VH)
Rank VH [ mV ] Conditions
*Electrical Characteristics(Ta=25C)
Item Symbol Conditions Min. Typ. Max. Unit A 122 to 150 B=50mT, Vc=IV Constant Voltage Drive
Output Hall Voltage
VH
Const. Voltage Drive
B=50mT, Vc=IV B=0mT, Ic=0.1mA B=0mT, Ic=0.1mA B=0mT, Vc=IV
B 122 204 mV C
144
to
174
168
to
204
Input Resistance Output Resistance Offset Voltage
Rin Rout Vos
240 240 -7
550 550
*Input Current Derating Curve
+7 mV
20
Temp. Coefficient of VH VH B=50mT, Ic=5mA -1.8 %/C Input Current(mA)
Input Resistance
Rin : 240 to 550
Temp. Coefficient of Rin
Rin
B=0mT, Ic=0.1mA
-1.8
%/C
10
Dielectric Strength
100V D.C
1.0
M
Notes : 1. VH = VHM - Vos (VHM:meter indication)
1 -V 2. VH = VH (T1) X VH (T3) - T H) (T2) X 100 (T3 2 1 Rin (T3) - Rin (T2) X 100 3. Rin = Rin (T1) X (T - T )
3 2
T1 = 20C, T2 = 0C, T3 = 40C
0 - 40
- 20
0
20
40
60
80
100
120
Ambient Temperature.(C)
0
*Dimensional Drawing (mm)
2.70.1 0.95 -0.1
Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range.
0.9
5
2.350.1
0.25
N
*Input Voltage Derating Curve
2.0
Input Voltage(V)
0.38 0.2
1.45
Input Resistance
Rin : 240 to 550
1.0
0.5
0.57
8.01.0
0.8
5
0.4
0.3
1.0
1
1.0
2
1.0 10
3
1.0
4
Pinning Input Output 1() 2() 3 4 () ()
0 - 40
- 20
0
20
40
60
80
100
120
Ambient Temperature.(C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope.
10
27
HW-302B
a
*Characteristic Curves
Rin-T
1400 1200
Input Resistance:Rin( ) Output Voltage:VH(mV)
VH-B
350.0 300.0 250.0 200.0 150.0 100.0 50.0 0.0 0 Vin
Ic const Vc const Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C)
1000 800 600 400 200 0 -50 0 50
Ambient Temperature(C)
Ic
d
10 20 30 40 50
Magnetic Flux Density B (mT)
100
150
VH-T
1000
Ic const Vc const Output Voltage:VH(mV)
VH-Vc, VH-Ic
800
Ic const Vc const Output Voltage:VH(mV)
750 Ic 500
Ic = 5 (mA) Vc = 1 (V) B = 50 (mT)
600
B = 50 (mT) Ta = 25 (C)
Ic
400 Vin 200
250
Vin
0 -50
0
50
Ambient Temperature(C)
100
150
0 0
5 0.5
10 1.0
Ic (mA) Input Current Vc (V) Input Voltage
15 1.5
20 Ic:(mA) 2.0 Vc:(V)
h
VOS-T
16.0 14.0
Ic const Vc const Ic = 5 (mA) Vc = 1 (V) B = 0 (mT)
VOS-Vc, VOS-Ic
20 18
Offset Voltage:Vos(mV) Ic const Vc const B = 0 (mT) Ta = 25 (C)
Offset Voltage:Vos(mV)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 -50.0
Ic
16 14 12 10 8 6 4 2
i
Ic
Vin
Vin
5
0.0
50.0
Ambient Temperature(C)
100.0
150.0
0 0
10 1.0
Ic (mA) Input Current Vc (V) Input Voltage
15 1.5
0.5
20 Ic:(mA) 2.0 Vc:(V)
*Magnetic Flux Density 1(mT)=10(G)
In This Example : Rin=350( ), Vos=1.9(mV), Vc=1(V)
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